Isolation and characterization of large-area GaSb membranes grown on GaAs substrates

We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90° interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each with a different etch stop process such that the GaAs substrate is removed without affecting the GaSb epi-layer. The GaSb membranes upon isolation are characterized for crystal quality using x-ray diffraction and for surface quality using atomic force microscopy.