A study of tunnel recombination junction on a-Si:H/HIT tandem structure solar cell

Novel tandem solar cell structure a-Si:H/HIT has been developed. The fabrication of hetero structure tandem cell (HSTC) has been combined an hydrogenated amorphous silicon (a-Si:H) p-i-n thin film solarp cell for a top cell and a heterojunction with an intrinsic thin layer (HIT) type silicon solar cell for a bottom cell. Using the novel tandem structure, an open circuit voltage of 1.43 V has been obtained. A tunnel recombination junction (TRJ) quality of an amorphous silicon based tandem solar cell can have a significant impact on its performance. Therefore, it is important to understand the TRJ characteristics.