ZnS buffer layer prepared by sulfurization of sputtered Zn film for Cu(In, Ga)Se2 solar cells

We report on a novel method of a fabrication of a ZnS buffer layer for an application of Cu(In, Ga)Se
2
(CIGS) solar cells. The ZnS thin film was prepared by a sulfurization of a sputtered Zn film using a sulfur cracker. The structural and optical properties of the ZnS films and the photovoltaic performance of the ZnS-employed CIGS solar cells were investigated. The thin ZnS film played a sufficient role as a buffer layer achieving the power conversion efficiency of 10.5%.