An efficient mechanism to simulate DC characteristics of GaAs MESFETs using swarm optimization

A five parameters I-V model has been presented to predict I-V characteristics of submicron GaAs MESFETs. The proposed model guaranteed convergence in an optimization process and does not trap in a local minimum which is frequently observed in Dobes model. Comparison between the Dobes and the proposed model has been carried out by developing an optimization code based on particle swarm optimization. By evaluating RMS errors as a function of V
_gs
and V
_ds
it has been shown that the proposed model is efficient both in time and accuracy compared to the Dobes model and it should be a useful tool for the designing of future integrated circuits with sub-micron gate length GaAs MESFETs.