Analysis of acoustic wave property on ZnO/Diamond/Si thin film substrates

Multi-layer piezoelectric thin-film substrates which may have the properties of good temperature characteristic, high reflectivity, high coupling coefficient, high phase velocity, and integratible with semiconductor, have the potential to be used on acoustic devices. The properties of piezoelectric thin-film substrates are determined by the structures of the substrates, piezoelectric material, the metal film thickness and etc. Usually the acoustic wave parameters of the substrates are not readily obtainable from literature. In this paper, the acoustic wave properties of ZnO/Diamond/Silicon substrate was analyzed using finite element method. The data of this paper would be applied to design high frequency RF acoustic devices such as resonators and filters.