A surface potential based model for GaN HEMTs

In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and g
_d
(output conductance) which is surface potential based and physically accurate. Our model has shown excellent agreement with experimental data for drain current and gd. This model is capable of showing correct physical behavior and is robust which can be observed through various benchmark tests, such as AC symmetry test, DC symmetry test and self-heating test. We have used Agilent ICCAP, ADS and Synopsys Hspice for our simulations.