Total Dose Ionizing Radiation Effects in the Indium–Zinc Oxide Thin-Film Transistors

This letter deals with the total dose ionizing radiation effects in the amorphous indium-zinc oxide thin-film transistors (IZO TFTs). After radiation, a negative shift of threshold voltage was observed. The experimental results show electron field effect mobility, subthreshold swing, and low frequency noise were increased after radiation. Furthermore, the influences of bias and gate length on the radiation effect of IZO TFTs are also presented.