A comparative assessment of Schottky-Barrier Source/Drain GAA MOSFET with conventional and junctionless GAA MOSFETs

A comparative assessment of Dual Material Gate (DMG) Schottky-Barrier (SB) Source/Drain (S/D) Gate All Around (GAA) MOSFET is carried out with conventional DMG-GAA having doped S/D MOSFET and DMG Junctionless GAA MOSFET. The RF/Analog performance like transconductance generation factor (gm/IDS), intrinsic gain (gm/gd), cut-off frequency (ft), and Ion/Ioff of these devices is studied using ATLAS-3D Device Simulator. The result shows that the Schottky-Barrier Source/Drain GAA MOSFET is superior to other two devices in all the electrical and high frequency parameters except Ion/Ioff ratio. MOSFET with metal S/D shows the faster performance due to low parasitic S/D resistance offered by SB-S/D. So it can be used for low power, faster switching and high frequency applications.