Simulation study for Dual Material Gate Hetero-Dielectric TFET: Static performance analysis for analog applications

This paper presents simulation study of Static characteristics for DMG (Dual Material Gate) Hetero-Dielectric (H-D) Tunnel FET. Here, two previously reported device architectures i.e. a DMG Single Dielectric TFET and SMG (Single Material Gate) Hetero-Dielectric TFET have been optimized by tuning the work functions and length and later on their combined impact on the proposed device architecture i.e. DMG Hetero-Dielectric Tunnel FET (DMG H-D TFET) is been studied. Electrical parameters such as threshold voltage, drain current I
ds
, Sub threshold Slope, I
on
to I
off
ratio, ambipolar current I
amb
have been studied. Some of the important analog parameters like transconductance g
m
, drain conductance g
d
, Output resistance R
out
, transconductance generation efficiency g
m
/I
ds
have also been studied using ATLAS Device Simulation Software.