High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel FETs with Zn-diffused source junctions

We have demonstrated the operation of high I
on
/I
off
and low subthreshold slope planar-type InGaAs Tunnel FETs with Zn-diffused source junctions. It has been found that the solid-phase Zn diffusion can form steep-profile and defect-less p
⁺
/n source junctions because of the inherent nature of Zn diffusion into InGaAs, which has significantly improved the TFET performance. The present devices have exhibited the record small S.S. of 64 mV/dec and large I
on
/I
off
ratio over10
⁶
as the planar-type III-V TFETs.