High stability fluorinated zinc oxide thin film transistor and its application on high precision active-matrix touch panel

We present fluorinated ZnO (F-ZnO) TFT to overcome the native drawback of pure ZnO TFT. At a optimum F concentration of ∼10
²⁰
/cm
³
, it exhibits high field-effect mobility of ∼71cm
²
/Vs, low sub-threshold slope (SS) of 0.18V/decade, high reliability, good uniformity and light insensitivity, The improvement is attributed to the passivation effect of F. Based on the high performance F-ZnO TFTs, a novel active-matrix self-capacitive touch panel was firstly realized. This touch technology combined the functions of high precise stylus handwriting and sensitive multi-touch, which will be the trend of the development of the next-genaration high precision touch panel.