FDSOI nanowires: An opportunity for hybrid circuit with field effect and single electron transistors

Thanks to a well-controlled CMOS FDSOI technology we have recently been able to demonstrate breakthroughs in the combined use of field effect and Coulomb blockade phenomena. On one hand, we have demonstrated room temperaturehybrid circuits based on single electron transistors and MOSFETs. On the other hand, we have shown the practical performance of electron pumps designed with a single silicided Coulomb island and MOSFETs as tunable barriers for metrologic applications.