Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displacement

We demonstrate the ultra-high displacement (D) of ~8 V/nm (n = ~4×10
¹³
cm
^-2
) in bilayer graphene using the solid state Y
₂
O
₃
top gate, which has been reached only by the ion gating so far. The systematic comparison of I-V and C-V curves at high D elucidates that the carriers in bilayer graphene electrically communicate with trap sites within the band gap and that the filling of carriers in the high energy sub-bands results in the reduction of the conductivity due to the inter-band scattering.