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High-performance few-layer-MoS2 field-effect-transistor with record low contact-resistance | IEEE Conference Publication | IEEE Xplore

High-performance few-layer-MoS2 field-effect-transistor with record low contact-resistance


Abstract:

Recently, Molybdenum Disulphide (MoS2) has emerged as a promising candidate for low-power digital applications. Compared to monolayer (1L) MoS2, few-layer MoS2 (FL-MoS2) ...Show More

Abstract:

Recently, Molybdenum Disulphide (MoS2) has emerged as a promising candidate for low-power digital applications. Compared to monolayer (1L) MoS2, few-layer MoS2 (FL-MoS2) is attractive due to its higher density of states (DOS). However, a comprehensive study of FL-MoS2 field-effect-transistor (FET) is lacking. In this paper, we report a high-performance FL-MoS2 FET with record low contact resistance (~0.8 KΩ.μm) that is close to the value for metal-silicon contacts in CMOS technology. A correlation of device performance and the number of MoS2 layers is established to guide the design of high-performance FL-MoS2 FET. Moreover, it is found that edge contacts (metal contact to each edge of MoS2 layers) play a key role in the efficient injection of electrons from metal to MoS2. This is confirmed by experiments as well as density functional theory (DFT) calculations. Moreover, a top gated FL-MoS2 (5 nm) FET is also demonstrated with a robust current saturation and high drive current (24 μA/μm) even without source/drain doping.
Date of Conference: 09-11 December 2013
Date Added to IEEE Xplore: 30 January 2014
Electronic ISBN:978-1-4799-2306-9

ISSN Information:

Conference Location: Washington, DC, USA

References

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