Graphene/fluoropolymer hybrid materials with enhancement of all device properties for improved field-effect transistors

We report on the substantial improvement of the electronic characteristics of field-effect transistors (FETs) based on chemical vapor deposition (CVD) graphene, reduced graphene oxide (RGO), and molybdenum disulfide (MoS
₂
) by an interacting capping layer of appropriate amorphous or polycrystalline fluoropolymers. All the key 2-dimensional device properties are improved including mobilities, on-off current ratio, electron-hole transport symmetry, Dirac voltage, and reduced residual carrier density.