InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)

Record setting III-V MOSFETs are reported. For the first time performance better than state-of-the-art HEMTs is demonstrated. For a MOSFET with 10 nm unstrained InAs surface channel and L
_g
= 130 nm operating at 0.5 V, on-current as high as I
_on
= 601 μA/μm (at fixed I
_off
= 100 nA/μm) is achieved. This record performance is enabled by g
_{m, ext}
= 2.72 mS/μm and S = 85 mV/dec, DIBL = 40 mV/V, resulting from breakthroughs in epitaxy and III-V/dielectric interface engineering. Measured mobility is 7100 cm
²
/V.s at n
_s
= 6.7×10
¹²
cm
^-2
. Device simulations further elucidate the performance potential of III-V N-MOSFETs.