Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

With the ability to engineer ferroelectricity in HfO
2
thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.