Charge trapping type FinFET flash memory with Al2O3 blocking layer

The scaled FinFET flash memories with an oxidenitride-oxide (ONO) charge trapping (CT) layer have actively been developed in the past few years owing to the excellent short-channel effect (SCE) immunity of the FinFET [1, 2]. As a high-k dielectric blocking layer, an Al
2
O
3
layer has also been used in the bulk FinFET flash memories [3]. Very recently, we have also developed floating-gate (FG) type SOI-FinFET flash memories [4-6]. In this paper, as a further study, we fabriacted CT type SOI-FinFET flash memories with different blocking layers of Al
2
O
3
and SiO
2
as shown in Fig. 1, and comparatively investigate their electrical characteristics.