Evidence of mobility enhancement due to back biasing in UTBOX FDSOI high-k metal gate technology

In this work, we study the effect of the back biasing on the effective mobility in Ultra-Thin Box Fully Depleted SOI devices. Thanks to the carrier mobility extraction on large N & PMOS transistors, for thin (GO1) and thick gate oxide (GO2), the important role of the surface roughness and effective field in the mobility reduction is highlighted. Moreover, for the first time these electrical results have been corroborated by Poisson equation coupled with Hansch's quantum simulations.