Effect of film thickness on the memristive behavior of spin coated titanium dioxide thin films

The paper presents the memristive behavior of spin-coated titania thin films. The spin speed during the deposition was varied and their effect on the film thickness and thus, to the memristive behavior was studied. Sample deposited at 5000 rpm produced thinner film thickness which result in better switching behavior. The sample showed larger OFF to ON resistance ratio of 5. All samples were measured 3 times for each positive and negative bias. It was found that the memristive behavior was repeatable for 2
^nd
and 3
^rd
measurement. The crystallinity of the films was characterized using Raman spectroscopy. In our work, it was observed that the film thickness mainly affects the switching behavior of memristive device instead of the crystallinity of the films.