Strained Si nanowire tunnel FETs and inverters

Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <60mV/dec at 300K and low I
off
, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at Vdd ∼ 0.3 V than MOSFETs at the same standby power and switching energy [1].