Development of via-last 3D integration technologies using a new temporary adhesive system

We develop new via-last backside-via 3D integration technologies using a unique temporary adhesive system in which visible-light laser is employed for wafer debonding from glass carriers. The advanced 3D and TSV researches are driven in order to fabricate Si interposers with high-density TSVs and highly integrated 3D hetero chips at Global INTegration Initiative (GINTI) as a new system integration research center. High-TTV wafer thinning, notch-free backside via formation, and void-less bottom-up Cu electroplating are performed, and the resulting TSV daisy chains show good I-V characteristics.