MHEMT G-band low-noise amplifiers

To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.