X-band MMIC scalable large signal model based on unit cell behavioral data model and passive embedding network

This paper combines the advantages of accurate measurement based non-linear behavioral look-up table transistor models with passive embedding networks to develop a scalable large signal model. This approach provides for a more robust utilization of measurement based data models in X-band MMIC design by providing accurate performance predictions as a function of gate periphery and at power levels beyond the limitations of high frequency measurement systems. An example is provided where a 1 W Gallium Nitride reference device, characterized in Class B at 9 GHz, delivering over 70% efficiency, is used to accurately predict the behavior of devices with up to 5 times larger gate periphery.