200 GHz interconnects for InP-on-BiCMOS integration

In order to combine the advantages of both InP-HBT and SiGe-BiCMOS technology, a 3D integration approach has been developed based on the transferred-substrate concept with BCB wafer bonding. Using this process vertical interconnects are realized that exhibit excellent broadband transmission properties up to 220 GHz. Insertion loss remains below 0.5dB up to W-band and 1dB to 220GHz. The interconnects can be described with good accuracy by 3D EM simulation over the full frequency range.