X-band low noise amplifier MMIC using AlGaN/GaN HEMT technology on SiC substrate

A 9.7-12.9 GHz monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) is designed and fabricated using AlGaN/GaN 0.25 μm high electron mobility transistor (HEMT) on silicon carbide (SiC) technology. The LNA shows a noise figure of 1.7-2.1 dB with a small-signal gain of 20-26 dB across the 9.7-12.9 GHz frequency range. In continuous wave (CW) conditions, the saturated output power of 34 dBm is showed at 11.2 GHz and the output third-order intercept point (OIP3) of 42 dBm is also achieved at 11.4 GHz.