JFET pinched bootstrap diode (JPBD) without substrate leakage current integration to 120V BCDMOS process

A new concept to realize the usage of a high-voltage bootstrap diode without substrate leakage current for 120 V high-side-driver application is proposed and verified by 2D simulation. The combination of high-voltage (HV) JFET and medium-voltage (MV) diode with proper modification to avoid substrate leakage current at forward conduction state and high-blocking voltage at off state for integrated bootstrap operation is proposed. Simulation results showed 130 V of breakdown voltage and 0.79 V of FVD (forward voltage drop) @ 100 A/cm
²
without substrate leakage current at conduction mode.