Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise

Novel 3.3-kV trench IGBT with low loss and low dv
AK
/dt noise was developed. The structural feature of the IGBTs is deep p-WELL layers separated from trench gates. This structure suppresses excess V
GE
overshoot and then reduces recovery dv
AK
/dt. Moreover, this effect is enhanced by reducing the resistance of the deep p-WELL layers (R
FP
). It was found that, for the first time, the trade-off characteristics between V
CEsat
and recovery dv
AK
/dt were drastically improved by separating p-WELL layers from trench gates and decreasing R
FP
. The recovery dv
AK
/dt could be reduced by 79% more than that for the conventional trench IGBT, maintaining a small V
CEsat
and E
on
equal to the conventional one.