A comparative analysis of FETToy simulation of CNTFET characteristics

In this paper we analyse the effect of gate oxide thickness on various characteristics of CNTFET. Carbon nanotube based FET devices are more and more important today because of their improved gate capacitance. In nanometre regime quantum capacitance plays the major role for calculating the gate capacitance of a Device. After analysis of FETToy simulation, we found some favourable characteristics of gate capacitance which is decreasing, while reducing the oxide thickness and also observed larger drain current while reducing the oxide thickness, which is not possible to get in MOSFET.