Modeling of light-emitting diode with top p-electrode patterned as a mesh

Light-emitting diodes (LEDs) with patterned metal electrode to the top p-semiconductor layer resulting in enhanced light extraction are studied. Analytical model which includes an efficient procedure for numerical calculation of light extraction under nonuniform current injection caused by contact patterning is developed and used for modeling of two-dimensional spatial distributions of potential, injected current and output optical power.