High-speed SiGe BiCMOS technologies for applications beyond 100 GHz

This review discusses recent developments of high-speed SiGe HBT technologies and their application to integrated circuits with operation frequencies above 100 GHz. SiGe HBTs with maximum oscillation frequencies up to 500 GHz and CML ring oscillator delay times of 2.0 ps are now possible. The integration capability of the technologies is demonstrated with examples of on-chip 100 GHz RF-MEMS switches and 130 GHz antenna. To verify not only performance but also reliability of the high-speed HBTs the results of long-term mixed-mode stress tests are presented. Finally, examples of 240 GHz LNAs and 120 GHz transceivers demonstrate the circuit performance of advanced SiGe technologies.