Signal generation and amplification up to 600 GHz using metamorphic HEMT technology

In this paper, we present an overview of advanced millimeter-wave and submillimeter-wave monolithic integrated circuits for applications around 600 GHz, recently realized using our 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW) with a reduced ground-to-ground spacing. A frequency multiplier-by-six is presented for signal generation and a terahertz monolithic integrated circuit (TMIC) is shown, offering a small-signal gain of more than grounded coplanar circuit topology 18 dB between 557 and 616 GHz.