AlGaN/GaN HEMT development targeted for X-band applications

This paper discusses a newly developed 0.25μm GaN on SiC foundry process technology to support discrete and MMIC applications extending from L-through X-band. The GaN HEMT technology is based on high-throughput and low-cost i-line photolithographic tools and on large-diameter 100mm SiC substrates. The technology supports applications utilizing supply voltages up to 28V with power density of 4W/mm, PAE of 45%, and large signal linear gain of 15dB at 10GHz based on on-wafer measurements without harmonic terminations.