Design of nonvolatile memory based on magnetic tunnel junction for special electronic systems

Description of non-volatile memory based on magnetic tunnel junction is presented. A dynamic Verilog-A behavioral model and a Spice macro-model of the single memory cell is described. The advantages of the proposed models is demonstrated on a next generation revolutionary Magnetic Random Access Memory (MRAM) which we offer to implement on an radiation inherently integrated circuit (IC) based on CMOS technology.