Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

The influence of random telegraph noise (RTN) in MOSFETs on drain current (I
_d
) during the rise/fall edges of the pulsed gate voltage (V
_g
) cycle was investigated. We have revealed for the first time that the existence of RTN increases I
_d
fluctuations under dynamic V
_g
by making a comparison between FETs with and without RTN. The initial trap occupation states before varying V
_g
, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of V
_g
. The revealed effects of RTN with different profiles on I
_d
under dynamic V
_g
will be useful for designing ultrahigh speed circuits.