Thermoelectric properties of multilayered p-type SiGe thin films

We fabricated thin films with SiGe/Si multilayered structure by using MBE and evaluated their low temperature transport properties in detail. Boron-doped Si/sub 80/Ge/sub 20/ wells separated with 500 A Si barrier layers were formed on highly resistive Si(100) substrate. Measurements of resistivity and Seebeck coefficient clarify that the layered structure has an increasing power factor, /spl alpha//sup 2///spl rho/, with decreasing well width for temperatures below 300 K.