Bandwidth improvement of cw THz receivers by Be doping of low-temperature-grown InGaAs/InAlAs heterostructures

LTG InGaAs/InAlAs based cw THz receivers can be fine-tuned by Be doping, which is an advantage towards their LTG GaAs counterparts. By increasing Be doping we reduce carrier trapping time, resulting in larger bandwidth. As a tradeoff, the current response is reduced.