Optimized Tera-FET detector performance based on an analytical device model verified up to 9 THz

We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.