High-speed THz semiconductor imaging camera

A high-speed room temperature THz imaging system is developed. The sensor consists of an array (64×64) of plasmonic semiconductor detectors. The detectors have broadband responsivity of up to 20 V/W in the frequency range 10 GHz – 1 THz. Pixel-to-pixel deviation of the sensor parameters is not larger than 20%. The sensor with an amplification electrical circuit provide shot times of 100 ms. The sensor is fabricated using standard semiconductor fab cycles. Therefore, the device is an ideal object for low-cost mass production.