Thermal noise modeling of nano-scale MOSFETs for mixed-signal and RF applications

This paper presents the thermal noise in nano-scale MOSFETs — from measurement, characterization, modeling, and potential technology enhancement for future low power, mixed-signal, and radio-frequency (RF) applications. Experimental data from five CMOS technology nodes, namely 180 nm, 130 nm, 90 nm, 65 nm, and 40 nm nodes are presented and discussed.