F-DICE: A multiple node upset tolerant flip-flop for highly radioactive environments

This paper introduces a novel design for a multiple node upset tolerant flip-flop. This design uses the TDICE memory cell that was proposed in the technical literature for memory arrays and applies its principles of operation to a Master Slave flip-flop implemented at 65 nm CMOS technology. It is shown that the proposed design approach is particularly suited for flip-flops targeting highly radioactive environments; simulation validates the multiple node upset tolerance and its viability. A test chip developed for the on-silicon validation is also described.