Modeling reliablity issues in RF MEMS switches

We present a problem-adapted, physics-based 3D finite element (FE) model of an RF-MEMS switch, which is used for investigating the failure scenario of such devices caused by electrically induced stiction, one of the major reliability concerns, which limits their broad commercial application as, e.g., in mobile phones. In particular, a novel embedded active thermal recovery capability is analyzed by coupled electro-thermo-mechanical simulations in order to identify those parameters, which are most significant for the recovery efficiency and, hence, provide the best prospects for optimizing the switch with a view to a reliable design. The derived model was validated and calibrated by optical white-light interferometry and laser Doppler vibrometry to make it reliable and accurate, particularly with regard to predictive simulation.