A hybrid spin-charge mixed-mode simulation framework for evaluating STT-MRAM bit-cells utilizing multiferroic tunnel junctions

Multiferroic tunnel junctions (MFTJs) consisting of ferromagnetic contacts sandwiching a ferroelectric tunnel barrier have been proposed as possible data storage elements. However, a simulation framework is needed for evaluating and analyzing the design and performance of memory cells based on MFTJs. In this paper, we propose a spin-charge mixed-mode simulation framework that captures the device physics of the MFTJ for SPICE circuit simulations.