An analytical model for predicting forming/switching time in conductive-bridge resistive random-access memory (CBRAM)

Analytical solutions (i.e., compact model) to differential equations governing the surface movement of conductive filament (CF) in CBRAM have been developed. Time needed for forming and switching of memory cell can readily be evaluated based on the device structure and the applied bias. The accuracy of the model has been verified by comparison to both experimental and numerical simulation results for Ag-GeS
₂
-W CBRAM cells.