A modified top-of-the-barrier model for graphene and its application to predict RF linearity

We develop a modified top-of-the-barrier model (TBM) for simulating graphene FETs. Our model captures band-to-band (Klein-Zener) tunneling, which is important in zero-bandgap materials, and it accounts for variations in the densities of states between the channel and the source and drain regions. The model is benchmarked against a sophisticated self-consistent NEGF solver and shows very good quantitative agreement. The utility of our modified TBM is demonstrated by investigating and comparing the RF linearity of graphene FETs to that of CNFETs and conventional MOSFETs.