Unified FinFET compact model: Modelling Trapezoidal Triple-Gate FinFETs

A unified FinFET compact model is proposed for devices with complex fin cross-sections. It is represented in a normalized form, where only four different model parameters are needed. The proposed model accurately predicts the current-voltage characteristics of different FinFETs structures such as Double-Gate (DG), Cylindrical Gate-All-Around (Cy-GAA), or Rectangular Gate-All-Around (Re-GAA) FinFETs. In addition, for the first time, Trapezoidal Triple-Gate (T-TG) FinFETs are accurately modelled. Short-Channel-Effects (SCE) sub-models have been also implemented in the presented work. The model has been verified with TCAD data.