Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length

This letter describes an asymmetric gate tunnel field-effect transistor (AG-TFET) with a gate-all-around (GAA) structure in the source and a planar structure in the drain. It has a low OFF-state current (6.55 ×10
^-16
A/μm) and a high ON-state current (2.47 ×10
^-5
A/μm) because the screening length λ of a GAA nanowire structure is half that of the planar structure. Simulations reveal that a subthreshold swing as low as 42 mV/decade and an ON/OFF current ratio as high as 10
¹⁰
are realized. The AG-TFET is easily fabricated as an actual device by simply changing the layout of gate in a general TFET fabrication.