0.2μm Gate AlGaAs/GaAs HIGFETt (Heterostructure Insulated gate FET) with a (111) face of n+-GaAs selectively grown by MOCVD

A new GaAs HIGFET with K-value of 1A/V
²
/mm has been developed for application to high-speed LSIs. This paper describes three essential processes for fabricating this HIGFET: (1) a new gate process using a (111) face appearing on selectively-grown n
⁺
-GaAs, for both achieving a 0.2-μm gate and reducing the short channel effect; (2) a highly-doped GaAs channel grown by MBE, for increasing the K-value; and (3) a technique for establishing side contact between the n
⁺
-GaAs and the n-GaAs channel, for minimizing a source resistance.