A new CVD film formation process using ionization of TEOS

A new CVD method called ionization CVD, where ionized source molecules were deposited on a substrate by Coulombic force, was developed to control film formation and particle generation. This method was applied to the TEOS/O/sub 3/-APCVD process by using the surface corona discharge. The growth rate of film formed by the ionization CVD was 2-4 times higher than that by the common CVD. Films deposited by the new CVD showed strongly the flow-like shape. Nanometer-sized particles which have been generally generated in the common reactor, were not detected in the ionization CVD reactor.