An Analytic Continuous Model for the Conduction Behavior For Mosfets from the Weak Inversion Region to the Strong Inversion Region

Summary form only given. In the design of CMOS analog VLSI, an analytic and continuous model is necessary indeed for the circuits simulation. Such a model can bz used especially in the design of operational amplifiers where the maximum open-lwp voltage gain has to be found. This model gives an intuitive understanding of analog design for MQSFETs. Both the transconduction and the ourput impedance of the MQSFETs can be characterized excellenrly, and the predicrion of the open-loop voltage gain is very good In this paper, the conduction behavior of MQSFETs in the weak inversion region and in the strong inversion region is discussed first. Then, a continuous madel is developed to fit both the weak inversion region and the strong inversion region. The mcdel for the output behavior of MOSETs is developed basically according to Frohman-Benchkosky’s model.